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Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Zhytomyr State University Library

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Relation http://eprints.zu.edu.ua/10520/
ttp://jap.aip.org/
 
Title Mechanism of contact resistance formation in ohmic contacts with high dislocation density
 
Creator Sachenкo, А. V.
Belyaev, А. Е.
Boltovets, N. S.
Konaкova, R. V.
Kudryк, Y. Y.
Novytsкyі, S. V.
Sheremet, V. N.
Lі, J.
Vіtusevіch, S. А.
 
Subject QC Physics
TK Electrical engineering. Electronics Nuclear engineering
 
Description A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is
proposed. Its specific feature is the appearance of a characteristic region where the contact resistance
increases with temperature. According to the mechanism revealed, the current flowing through the
metal shunts associated with dislocations is determined by electron diffusion. It is shown that current
flows through the semiconductor near-surface regions where electrons accumulate. A feature of the
mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk
resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as
silicon-based materials. A reasonable agreement between theory and experimental results is obtained
 
Publisher Американский институт физики
 
Date 2012
 
Type Article
PeerReviewed
 
Format text
 
Language uk
english
 
Identifier http://eprints.zu.edu.ua/10520/1/Sachenko%20A.V.%20%28Mechanism%20of%20contact%20resistance%20formation%20in%20ohmic%20contacts%20with%20high%20dislocation%20density%29%202012.pdf
Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А. (2012) Mechanism of contact resistance formation in ohmic contacts with high dislocation density. Journal of Applied Physics, 111 (8). 083701-083701. ISSN 0021-8979