A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
Zhytomyr State University Library
Переглянути архів Інформація| Поле | Співвідношення | |
| Relation |
http://eprints.zu.edu.ua/10538/
http://sciconf.org/ |
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| Title |
A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
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| Creator |
Sachenкo, А. V.
Belyaev, А. Е. Boltovets, N. S. Konaкova, R. V. Kudryк, Y. Y. Novytsкyі, S. V. Sheremet, V. N. Lі, J. Vіtusevіch, S. А. |
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| Subject |
QC Physics
TK Electrical engineering. Electronics Nuclear engineering |
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| Description |
About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
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| Publisher |
Zurich, Switzerland
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| Date |
2012-07
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| Type |
Article
PeerReviewed |
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| Format |
text
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| Language |
uk
english |
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| Identifier |
http://eprints.zu.edu.ua/10538/1/ICPS-contribution.pdf
Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). p. 49. |
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