Modeling of voltammetric characteristic for tunneling-resonant structure based on AlGaAs/GaAs semiconductor.
Zhytomyr State University Library
Переглянути архів Інформація| Поле | Співвідношення | |
| Relation |
http://eprints.zu.edu.ua/11501/
|
|
| Title |
Modeling of voltammetric characteristic for tunneling-resonant structure based on AlGaAs/GaAs semiconductor. |
|
| Creator |
Будник, Т.
|
|
| Subject |
T Technology (General)
|
|
| Description |
Transport of charge carriers in low-dimensional structures is often caused by tunneling effect. Tunneling means transiting of electron through the area limited by the potential energy barrier higher than the energy of electron [1]. Tunneling of electrons in low dimensional structures is determined not only by the energy of potential barriers, but also by allowed energy states for electrons within the structure. |
|
| Publisher |
Видавництво ЖДУ ім. Івана Франка
|
|
| Date |
2014-04-15
|
|
| Type |
Article
PeerReviewed |
|
| Format |
text
|
|
| Language |
uk
english |
|
| Identifier |
http://eprints.zu.edu.ua/11501/1/Microsoft%20Word%20-%20Budnyk_.pdf
Будник, Т. (2014) Modeling of voltammetric characteristic for tunneling-resonant structure based on AlGaAs/GaAs semiconductor. Фахівець ХХІ століття: професійні мовні компетенції : матеріали Всеукраїнської науково-практичної конференції для студентів немовних спеціальностей. pp. 15-17. |
|