Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation
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| Creator |
Nadtochiy, V.A.
Alyokhin, V.P. Golodenko, M.M. |
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| Description |
Experimental confirmations of the influence of the free surface of a chip on processes of plastic deforming under indentation such as a decrease of the effective activation energy of dislocations with reduction of load on the indenter and a considerable decrease of temperature of the beginning of polygonization processes, when annealing microhardness rosettes in the field of small impresses, are obtained. A possibility of dislocation motion by means of creeping at temperatures lower than brittleness threshold temperature was shown on the example of GaAs.
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| Date |
2014-10-28T19:29:33Z
2014-10-28T19:29:33Z 2005 |
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| Type |
Article
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| Identifier |
Microplasticity of subsurface layers of diamond-like semiconductors under microindentation / V.A. Nadtochiy, V.P. Alyokhin, M.M. Golodenko // Физика и техника высоких давлений. — 2005. — Т. 15, № 1. — С. 44-49. — Бібліогр.: 20 назв. — англ.
0868-5924 PACS: 61.72.Ff http://dspace.nbuv.gov.ua/handle/123456789/70108 |
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| Language |
en
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| Relation |
Физика и техника высоких давлений
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| Publisher |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
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