Pressure-induced transformations during annealing of silicon implanted with oxygen
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Pressure-induced transformations during annealing of silicon implanted with oxygen
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| Creator |
Misiuk, A.
Efros, B.M. |
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| Description |
Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-enriched (for implanted oxygen dose, D ≤ 1·10¹⁷ cm⁻²) or continuous (for D ≥ 6·10¹⁷ cm⁻²) buried SiO2 layers. Numerous treatment parameters contribute to the HP-induced phenomena in processed Si:O, among these are the HPaffected mobility and solubility of implanted oxygen as well as of silicon interstitials and of other implantation-induced defects and so the stability of oxygen clusters/precipitates; the misfit at the SiO₂/Si boundary is tuned by HP.
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| Date |
2014-11-01T16:03:01Z
2014-11-01T16:03:01Z 2006 |
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| Type |
Article
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| Identifier |
Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ.
0868-5924 PACS: 61.10.−i, 61.72.Yx, 81.40.Vw http://dspace.nbuv.gov.ua/handle/123456789/70257 |
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| Language |
en
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| Relation |
Физика и техника высоких давлений
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| Publisher |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
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