Pressure effect on electronic structure and magnetic properties of MB₆ and MB₁₂ borides
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Pressure effect on electronic structure and magnetic properties of MB₆ and MB₁₂ borides
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Creator |
Grechnev, G.E.
Baranovskiy, A.E. Logosha, A.V. Panfilov, A.S. Fil, V.D. Ignatova, T.V. Shitsevalova, N.Yu. Eriksson, O. |
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Description |
Theoretical and experimental studies of the pressure effect on electronic structure and magnetic properties of MB₆ and MB₁₂ borides are carried out to determine the electronic ground states and interactions responsible for the bulk and magnetic properties of these compounds. The band structure and total energy E were calculated ab initio for a number of atomic volumes, providing the equation of states, E(V), bulk moduli B, magnetic moments and susceptibilities. The temperature and pressure dependencies of magnetic susceptibility were also experimentally studied for a number of borides using a pendulum-type magnetometer. In semimetallic EuB₆ the paramagnetic Curie temperature is found to be increasing with pressure, dθ/dP = 0.44 ± 0.03 K/kbar, whereas in closely related GdB₆ compound the pressure effect is lower in magnitude but opposite in sign: dθ/dP = –0.17 ± 0.03 K/kbar. The peculiar details in electronic structures are found to be responsible for distinctions in magnetic ordering and the pressure effects on indirect f−f interactions.
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Date |
2014-11-01T16:21:00Z
2014-11-01T16:21:00Z 2006 |
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Type |
Article
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Identifier |
Pressure effect on electronic structure and magnetic properties of MB₆ and MB₁₂ borides / G.E. Grechnev, A.E. Baranovskiy, A.V. Logosha, A.S. Panfilov, V.D. Fil, T.V. Ignatova, N.Yu. Shitsevalova, O. Eriksson // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 110-114. — Бібліогр.: 13 назв. — англ.
0868-5924 PACS: 62.20.Dc, 71.15.Nc, 71.20.Lp http://dspace.nbuv.gov.ua/handle/123456789/70265 |
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Language |
en
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Relation |
Физика и техника высоких давлений
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Publisher |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
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