Pressure-induced structural transformations in Si:V and Si:V, Mn
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Pressure-induced structural transformations in Si:V and Si:V, Mn
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| Creator |
Misiuk, A.
Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. |
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| Description |
Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.
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| Date |
2014-11-06T18:23:35Z
2014-11-06T18:23:35Z 2008 |
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| Type |
Article
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| Identifier |
Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.
0868-5924 PACS: 61.72.Tt, 61.72.–y, 62.50.+p, 78.30.Am http://dspace.nbuv.gov.ua/handle/123456789/70463 |
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| Language |
en
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| Relation |
Физика и техника высоких давлений
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| Publisher |
Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
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