Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point
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| Creator |
Barchuk, S.V.
Lapshin, V.I. Maslov, V.I. Onishchenko, I.N. Tretyakov, V.N. |
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| Subject |
Plasma electronics
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| Description |
The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described.
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| Date |
2015-03-23T09:35:31Z
2015-03-23T09:35:31Z 2002 |
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| Type |
Article
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| Identifier |
Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ.
1562-6016 PACS: 52.25.-b http://dspace.nbuv.gov.ua/handle/123456789/78923 |
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| Language |
en
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| Relation |
Вопросы атомной науки и техники
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| Publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
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