Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs
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| Creator |
Dovbnya, A.N.
Maslov, N.I. Dovbnya, N.A. |
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| Description |
A possibility of full irradiation tests of semiconductor detectors and microelectronics using electron accelerators are considered in the present work. The techniques for irradiation and for detector tests were described. The data on the efficiency of electron and bremsstrahlung action on the Si bulk material are presented.
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| Date |
2015-03-30T08:32:03Z
2015-03-30T08:32:03Z 2001 |
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| Type |
Article
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| Identifier |
Radiation tolerance investigation of a Si detectors and microelectronics using NSC KIPT linacs / A.N. Dovbnya, N.I. Maslov, N.A. Dovbnya // Вопросы атомной науки и техники. — 2001. — № 3. — С. 164-166. — Бібліогр.: 12 назв. — англ.
1562-6016 PACS numbers: 29.40.Wk http://dspace.nbuv.gov.ua/handle/123456789/79269 |
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| Language |
en
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| Relation |
Вопросы атомной науки и техники
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| Publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
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