Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal
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| Creator |
Fomin, S.P.
Shcherbak, S.F. Kasilov, V.I. Lapin, N.I. Shul'ga, N.F. |
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| Subject |
Electrodynamics of high energies in matter and strong fields
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| Description |
The result of theoretical and experimental investigations of angular distribution structure of 1 GeV electrons scattered by silicon crystal of 10 mm thickness are presented. The electron beam was falling on the crystal under different angles (from zero to the critical channeling angle) in respect to the crystal axis <111>. The analysis of the experimental data was carried out with the help of computer simulation of electron beam passage through the crystal on the basis of binary collision model. It is shown, that the existence of several maxima in the angular distributions of scattered electrons is stipulated by contributions of different fractions of electron beam in crystal, namely: the channeled and the above-barrier. The combined technique (simulation-experiment) of investigation of elastic scattering makes it possible to obtain important quantitative information about relativistic electron beam dynamics in aligned crystals.
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| Date |
2015-04-01T19:19:03Z
2015-04-01T19:19:03Z 2001 |
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| Type |
Article
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| Identifier |
Features of angular distributions of 1 GeV electrons scattered by thin silicon monocrystal / S.P. Fomin, S.F. Shcherbak, V.I. Kasilov, N.I. Lapin, N.F. Shul'ga // Вопросы атомной науки и техники. — 2001. — № 6. — С. 138-143. — Бібліогр.: 8 назв. — англ.
1562-6016 PACS: 61.85; 41.75.H; 34.80.P http://dspace.nbuv.gov.ua/handle/123456789/79420 |
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| Language |
en
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| Relation |
Вопросы атомной науки и техники
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| Publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
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