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Preparation and properties of zinc doped cadmium selenide compounds by e-beam evaporation

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Title Preparation and properties of zinc doped cadmium selenide compounds by e-beam evaporation
 
Creator Kissinger, N.J. Suthan
Perumal, K.
Suthagar, J.
 
Subject селенид цинка
селенід цинку
zinc selenide
испарение
випаровування
evaporation
 
Description Cd1 – xZnxSe films with different zinc content were deposited by electron beam evaporation technique onto glass substrates for the application of solid-state photovoltaic devices. The structural, surface morphological and optical properties of
Cd1 – xZnxSe films have been studied in the present work. The host material, Cd1 – xZnxSe, have been prepared by the physical vapor deposition method of electron beam evaporation technique (PVD: EBE) under a pressure of 1 10 – 5 mbar. The
X-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along
(002) direction. Linear variation of lattice constant with composition (x) is observed. The optical properties shows that the band gap (Eg) values varies from 2.08 to 2.64 eV as zinc content varies from 0.2 to 0.8. The surface morphological studies show the very small, fine and hardly distinguishable grains smeared all over the surface. It is observed that the grain size is decreasing with increasing zinc content.
 
Publisher Видавництво СумДУ
 
Date 2012-01-10T09:21:50Z
2012-01-10T09:21:50Z
2011
 
Type Article
 
Identifier Kissinger, N.J. Suthan Preparation and properties of zinc doped cadmium selenide compounds by e-beam evaporation [Текст] / N.J. Suthan Kissinger, K. Perumal, J. Suthagar // Журнал нано- та електронної фізики. — 2011. — Т. 3, № 3. — С. 5-14.
http://essuir.sumdu.edu.ua/handle/123456789/22991
 
Language en