The silica and silicon luminescence induced by fast hydrogen ions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The silica and silicon luminescence induced by fast hydrogen ions
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| Creator |
Kalantaryan, O.V.
Kononenko, S.I. Muratov, V.I. |
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| Subject |
Нерелятивистская плазменная элeктрoника
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| Description |
The results of silica and silicon luminescence induced by hydrogen ions bombardment with energy 0.2 ÷ 0,45 MeV and 0.8 ÷ 2.4 MeV were presented in this paper. It was obtained that the ionluminescence spectra of SiO₂ were changed under hydrogen ions bombardment essentially. The relation between light intensity and implantation dose was determined. The silicon spectra were measured in the near ultraviolet and visible regions of wavelength. The spectra consist of three wide bands. The band with maximum at 326 - 328 nm was not observed earlier. The mechanisms of generation of these bands are discussed. The possibilities to discover oxide layer formed by the natural way on a silicon surface are shown. The novel method for control of proton dose in quartz was proposed.
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| Date |
2015-05-19T08:46:51Z
2015-05-19T08:46:51Z 2000 |
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| Type |
Article
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| Identifier |
The silica and silicon luminescence induced by fast hydrogen ions / O.V. Kalantaryan, S.I. Kononenko, V.I. Muratov // Вопросы атомной науки и техники. — 2000. — № 1. — С. 189-192. — Бібліогр.: 22 назв. — англ.
1562-6016 http://dspace.nbuv.gov.ua/handle/123456789/81676 533.9 |
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| Language |
en
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| Relation |
Вопросы атомной науки и техники
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| Publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
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