Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering
Electronic Archive of Sumy State University
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering
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Creator |
Perekrestov, Viacheslav Ivanovych
Перекрестов, Вячеслав Иванович Перекрестов, Вячеслав Іванович Korniushchenko, Hanna Serhiivna Корнющенко, Анна Сергеевна Корнющенко, Ганна Сергіївна Kosminska, Yuliia Oleksandrivna Косминская, Юлия Александровна Космінська, Юлія Олександрівна |
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Subject |
self-organized formation
isotropic substrate |
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Description |
A substantially new technological approach is considered, which is based on the self-organized formation of aluminum single crystal layer on isotropic substrates in the course of stationary condensation of reverse diffusion fluxes in a planar dc magnetron. The functional possibilities of self-organized ion sputtering systems are discussed.
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Publisher |
Technical Physics Letters
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Date |
2011-03-21T09:14:20Z
2011-03-21T09:14:20Z 2006 |
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Type |
Article
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Identifier |
Perekrestov, V.I. Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering [Текст] / V.I. Perekrestov, H.S. Korniushchenko, Y.O. Kosminska // Technical Physics Letters. — 2006. — vol. 32. — No. 10. — pp. 868-870
1063-7850 http://essuir.sumdu.edu.ua/handle/123456789/4077 |
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Language |
en
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