Запис Детальніше

Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections

Електронного архіву Харківського національного університету радіоелектроніки (Open Access Repository of KHNURE)

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Creator Gryshchenko, Sergii
 
Date 2010-01-20T10:37:58Z
2010-01-20T10:37:58Z
2007-05-01
 
Identifier 0040-2508
http://open-archive.kture.kharkov.ua/handle/123456789/50
 
Description A theoretical analysis has been conducted for the quantum efficiency of
an InGaAs/GaAs resonant cavity p-i-n photodetector for the ultrashort optical
connections. The quantum efficiency at resonance has been estimated. The mathematical
model allows for the physical parameters of the photodetector, radiation wavelength,
mirror reflectivity and optical absorption in all detector layers. The relations between the
quantum efficiency and the reflection coefficient of the upper mirror of the
Al0.65Ga0.35As/GaAs resonator in combination with other variable parameters of the
structure have been determined. The magnitudes of the upper mirror reflection
coefficient depending on physical parameters of the structure have been found.
 
Language en
 
Publisher Begell House, Inc.
 
Relation vol. 12;
 
Subject Resonant cavity detector, quantum efficiency
Detectors, Ultrashort connections
 
Title Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections
 
Type Article