Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections
Електронного архіву Харківського національного університету радіоелектроніки (Open Access Repository of KHNURE)
Переглянути архів ІнформаціяПоле | Співвідношення | |
Creator |
Gryshchenko, Sergii
|
|
Date |
2010-01-20T10:37:58Z
2010-01-20T10:37:58Z 2007-05-01 |
|
Identifier |
0040-2508
http://open-archive.kture.kharkov.ua/handle/123456789/50 |
|
Description |
A theoretical analysis has been conducted for the quantum efficiency of an InGaAs/GaAs resonant cavity p-i-n photodetector for the ultrashort optical connections. The quantum efficiency at resonance has been estimated. The mathematical model allows for the physical parameters of the photodetector, radiation wavelength, mirror reflectivity and optical absorption in all detector layers. The relations between the quantum efficiency and the reflection coefficient of the upper mirror of the Al0.65Ga0.35As/GaAs resonator in combination with other variable parameters of the structure have been determined. The magnitudes of the upper mirror reflection coefficient depending on physical parameters of the structure have been found. |
|
Language |
en
|
|
Publisher |
Begell House, Inc.
|
|
Relation |
vol. 12;
|
|
Subject |
Resonant cavity detector, quantum efficiency
Detectors, Ultrashort connections |
|
Title |
Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections
|
|
Type |
Article
|
|