Influence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetector
Електронного архіву Харківського національного університету радіоелектроніки (Open Access Repository of KHNURE)
Переглянути архів Інформація| Поле | Співвідношення | |
| Creator |
Gryshchenko, Sergii
Demin, Alexandr Lysak, Vladimir Sukhoivanov, Igor |
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| Date |
2011-11-23T14:39:46Z
2011-11-23T14:39:46Z 2011-02 |
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| Identifier |
http://hdl.handle.net/123456789/246
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| Description |
We present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror flattopped QE spectrum has been obtained. Conditions for ideal flattopped spectral response have been received. A design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak is presented. |
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| Language |
en
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| Publisher |
J. Opto-Electronics Review
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| Subject |
resonant-cavity enhanced photodetector
quantum efficiency |
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| Title |
Influence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetector
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| Type |
Article
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