The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes
Zhytomyr State University Library
Переглянути архів Інформація| Поле | Співвідношення | |
| Relation |
http://eprints.zu.edu.ua/8349/
http://link.springer.com/journal/11455 |
|
| Title |
The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes
|
|
| Creator |
Kudryk, Y. Y.
Zinovchuk, A. V. |
|
| Subject |
QC Physics
|
|
| Description |
The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light- emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied. Calculations based on a modified model of recombination coefficients show that current crowding leads to a significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23% at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR LEDs. |
|
| Publisher |
Springer
|
|
| Date |
2012
|
|
| Type |
Article
PeerReviewed |
|
| Format |
text
|
|
| Language |
uk
english |
|
| Identifier |
http://eprints.zu.edu.ua/8349/1/TEPL456.pdf
Kudryk, Y. Y. and Zinovchuk, A. V. (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes. Technical Physics Letters, 38 (5). pp. 14-20. ISSN 1090-6533 |
|