Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅
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Creator |
Golovenchits, E.I.
Sanina, V.A. Zalesskii, V.G. Scheglov, M.P. |
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Subject |
Магнитоэлектрические эффекты в сегнетомагнетиках
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Description |
The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn³⁺–Mn⁴⁺ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn³⁺ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn³⁺ and Mn⁴⁺ ions through of charge carriers in the charged layers.
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Date |
2017-05-20T14:28:39Z
2017-05-20T14:28:39Z 2010 |
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Type |
Article
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Identifier |
Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ / E.I. Golovenchits, V.A. Sanina, V.G. Zalesskii, M.P. Scheglov // Физика низких температур. — 2010. — Т. 36, № 6. — С. 654–664. — Бібліогр.: 23 назв. — англ.
0132-6414 PACS: 75.47.Lx, 76.50.+g, 77.80.–e http://dspace.nbuv.gov.ua/handle/123456789/117176 |
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Language |
en
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Relation |
Физика низких температур
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Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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