Electrophysical properties of meso-porous silicon free standing films modified with palladium
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrophysical properties of meso-porous silicon free standing films modified with palladium
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| Creator |
Manilov, A.I.
Skryshevsky, V.A. Alekseev, S.A. Kuznetsov, G.V. |
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| Description |
Resistivity and complex impedance voltage dependences for thick mesoporous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been obtained. Modification of electrophysical properties due to introduction of palladium particles into the porous matrix is observed. Impedance change regularities during oxidation of the samples have been measured. The explanation of experimental results by asymmetrical distribution of charge carrier traps in the bulk of porous silicon has been suggested. Energy band diagrams and charge transfer mechanisms of these heterostructures are discussed. |
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| Date |
2017-05-25T15:58:28Z
2017-05-25T15:58:28Z 2011 |
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| Type |
Article
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| Identifier |
Electrophysical properties of meso-porous silicon free standing films modified with palladium / A.I. Manilov, V.A. Skryshevsky, S.A. Alekseev, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 1-6. — Бібліогр.: 18 назв. — англ.
1560-8034 PACS 61.72.uf, 72.80.Cw, 73.61.Cw http://dspace.nbuv.gov.ua/handle/123456789/117603 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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