Simple method for SiC nanowires fabrication
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Simple method for SiC nanowires fabrication
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| Creator |
Kiselov, V.S.
Lytvyn, O.S. Yukhymchuk, V.O. Belyaev, A.E. |
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| Description |
In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.
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| Date |
2017-05-25T15:57:17Z
2017-05-25T15:57:17Z 2011 |
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| Type |
Article
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| Identifier |
Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 81.07.Gf http://dspace.nbuv.gov.ua/handle/123456789/117602 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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