X-ray study of dopant state in highly doped semiconductor single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
X-ray study of dopant state in highly doped semiconductor single crystals
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| Creator |
Shul’pina, I.L.
Kyutt, R.N. Ratnikov, V.V. Prokhorov, I.A. Bezbakh, I.Zh. Shcheglov, M.P. |
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| Description |
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of solid solution or under various stages of its decomposition – are shown. The combination of techniques of X-ray diffraction topography and high resolution X-ray diffractometry, higher sensitive to the crystal lattice strain than that traditionally used is taken as the basis for investigating the crystals with slight and strong absorption of X-rays. These methods were supplemented with digital processing of the topographic images of growth striations and electrical measurements.
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| Date |
2017-05-25T17:28:01Z
2017-05-25T17:28:01Z 2011 |
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| Type |
Article
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| Identifier |
X-ray study of dopant state in highly doped semiconductor single crystals / I.L. Shul’pina, R.N. Kyutt, V.V. Ratnikov, I.A. Prokhorov, I.Zh. Bezbakh, M.P. Shcheglov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 62-70. — Бібліогр.: 27 назв. — англ.
1560-8034 PACS 61.72.Dd, Ff, Ss; 81.05.Cy, Ea http://dspace.nbuv.gov.ua/handle/123456789/117624 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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