Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
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| Creator |
Lisovskyy, I.P.
Litovchenko, V.G. Zlobin, S.O. Voitovych, M.V. Khatsevich, I.M. Indutnyy, I.Z. Shepeliavyi, P.E. Kolomys, O.F. |
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| Description |
The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.
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| Date |
2017-05-25T18:44:48Z
2017-05-25T18:44:48Z 2011 |
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| Type |
Article
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| Identifier |
Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS 68.55.Ln, 78.30.Ap, 81.40.Ef http://dspace.nbuv.gov.ua/handle/123456789/117655 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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