Calculation of electron mobility and effect of dislocation scattering in GaN
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Calculation of electron mobility and effect of dislocation scattering in GaN
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| Creator |
Kundu, J.
Sarkar, C.K. Mallick, P.S. |
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| Description |
The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available experimental and theoretical data. |
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| Date |
2017-05-26T05:49:02Z
2017-05-26T05:49:02Z 2007 |
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| Type |
Article
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| Identifier |
Calculation of electron mobility and effect
of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 72.20.Dp, 78.35.+c http://dspace.nbuv.gov.ua/handle/123456789/117661 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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