Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
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| Creator |
Tetyorkin, V.V.
Sukach, A.V. Tkachuk, A.I. Movchan, S.P. |
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| Description |
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier. |
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| Date |
2017-05-26T06:00:07Z
2017-05-26T06:00:07Z 2013 |
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| Type |
Article
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| Identifier |
Injection current and infrared photosensitivity
in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ.
1560-8034 PACS 73.40.-c, 73.61.Ga, 78.30.Fs http://dspace.nbuv.gov.ua/handle/123456789/117663 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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