Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
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| Creator |
Tripathy, P.R.
Mukherjee, M. Pati, S.P. |
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| Description |
The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4H-SiC as compared to wz GaN based diode having the breakdown voltage (153 V) and efficiency (13.7%). The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power density of about 8.383×10¹⁰ W/m² as compared to GaN IMPATT diode that is capable to develop the power density 6.847×10¹⁰ W/m² for the same frequency of operation. It is also observed that wz-GaN exhibits better noise behavior 7.42×10⁻¹⁵ V²·s than SiC (5.16×10⁻¹⁵ V² ·s) for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that wz-GaN would be a suitable base material for high power application of IMPATT diode with moderate noise.
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| Date |
2017-05-26T13:00:15Z
2017-05-26T13:00:15Z 2011 |
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| Type |
Article
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| Identifier |
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ.
1560-8034 PACS 73.50.Td, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/117715 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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