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Role of Sb additive in the dielectric properties of Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys

Vernadsky National Library of Ukraine

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Title Role of Sb additive in the dielectric properties of Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys
 
Creator Sharma, J.
Kumar, S.
 
Description In this paper, we report the effect of Sb additive on dielectric properties of two
binary − InSe glassy systems, comparing the properties of a-Se⁹⁰In¹⁰ a-Se⁷⁵In²⁵ and a Se⁷⁵In²⁵Sb¹⁵ glassy alloys. The temperature and frequency dependence of ε′ and ε′′ in
glassy Se⁹⁰In¹⁰ , Se⁷⁵In²⁵, and Se⁷⁵In²⁵Sb¹⁵ alloys are studied by measuring the capacitanceand dissipation factor within the frequency 1 kHz–5 MHz and temperature 300–350 K ranges. Debye like relaxation of dielectric behavior has been observed, which is in
agreement with the Guintini theory of dielectric dispersion based on two electron
hopping over a potential barrier and is applicable in the present case. ε′ , ε′′ and loss
tangent (Tan δ) are found highly frequency and temperature dependent. Dependence of
these dielectric parameters on the Sb metallic impurity has also been found in the present
glassy system. The peculiar role of the third element Sb, as an impurity in the pure binary
Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys, is also discussed in terms of electronegativity
difference and covalent character between the elements used in making the aforesaid
glassy system.
 
Date 2017-05-26T12:26:20Z
2017-05-26T12:26:20Z
2011
 
Type Article
 
Identifier Role of Sb additive in the dielectric properties of Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys / J. Sharma, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 152-156. — Бібліогр.: 17 назв. — англ.
1560-8034
PACS 61.43.Dq, 71.55.Jv, 78.40.Fy
http://dspace.nbuv.gov.ua/handle/123456789/117703
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України