Role of Sb additive in the dielectric properties of Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Role of Sb additive in the dielectric properties of Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys
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Creator |
Sharma, J.
Kumar, S. |
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Description |
In this paper, we report the effect of Sb additive on dielectric properties of two binary − InSe glassy systems, comparing the properties of a-Se⁹⁰In¹⁰ a-Se⁷⁵In²⁵ and a Se⁷⁵In²⁵Sb¹⁵ glassy alloys. The temperature and frequency dependence of ε′ and ε′′ in glassy Se⁹⁰In¹⁰ , Se⁷⁵In²⁵, and Se⁷⁵In²⁵Sb¹⁵ alloys are studied by measuring the capacitanceand dissipation factor within the frequency 1 kHz–5 MHz and temperature 300–350 K ranges. Debye like relaxation of dielectric behavior has been observed, which is in agreement with the Guintini theory of dielectric dispersion based on two electron hopping over a potential barrier and is applicable in the present case. ε′ , ε′′ and loss tangent (Tan δ) are found highly frequency and temperature dependent. Dependence of these dielectric parameters on the Sb metallic impurity has also been found in the present glassy system. The peculiar role of the third element Sb, as an impurity in the pure binary Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys, is also discussed in terms of electronegativity difference and covalent character between the elements used in making the aforesaid glassy system. |
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Date |
2017-05-26T12:26:20Z
2017-05-26T12:26:20Z 2011 |
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Type |
Article
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Identifier |
Role of Sb additive in the dielectric properties of Se⁹⁰In¹⁰ and Se⁷⁵In²⁵ glassy alloys / J. Sharma, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 152-156. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS 61.43.Dq, 71.55.Jv, 78.40.Fy http://dspace.nbuv.gov.ua/handle/123456789/117703 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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