ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
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| Creator |
Semikina, T.V.
Mamykin, S.V. Godlewski, M. Luka, G. Pietruszka, R. Kopalko, K. Krajewski, T.A. Gierałtowska, S. Wachnicki, L. Shmyryeva, L.N. |
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| Description |
ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed. |
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| Date |
2017-05-26T08:56:39Z
2017-05-26T08:56:39Z 2013 |
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| Type |
Article
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| Identifier |
ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.
1560-8034 PACS 77.55.hf; 88.40.jm, jn, jp http://dspace.nbuv.gov.ua/handle/123456789/117676 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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