Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation
|
|
Creator |
Burbelo, R.
Isaiev, M. Kuzmich, A. |
|
Description |
The analysis of photo-thermo-acoustic transformation in materials with the modified properties of a surface layer has been made in this work. Formation of a photoacoustic response in a layered structure of the type “implanted layer + crystalline Si substrate” as a result of its irradiation by one laser pulse with duration of 20 ns is analyzed. |
|
Date |
2017-05-26T12:48:27Z
2017-05-26T12:48:27Z 2011 |
|
Type |
Article
|
|
Identifier |
Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation / R. Burbelo, M. Isaiev, A. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 167-169. — Бібліогр.: 4 назв. — англ.
1560-8034 PACS 78.20.nb, 81.70.Cv http://dspace.nbuv.gov.ua/handle/123456789/117708 |
|
Language |
en
|
|
Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|