Charge transport in bismuth orthogermanate crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Charge transport in bismuth orthogermanate crystals
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| Creator |
Bochkova, T.M.
Plyaka, S.N. |
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| Description |
Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa electrodes have been measured in the modes of double and unipolar injection of charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The appearance of the regions with negative differential resistance or sublinear rise of the current in characteristics is connected with the injection of the minority charge carriers and recombination processes in the space charge layer. |
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| Date |
2017-05-26T12:49:26Z
2017-05-26T12:49:26Z 2011 |
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| Type |
Article
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| Identifier |
Charge transport in bismuth orthogermanate crystals / T.M. Bochkova, S.N. Plyaka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 170-174. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS 72.20.Ht, -i http://dspace.nbuv.gov.ua/handle/123456789/117709 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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