Silicon carbide phase transition in as-grown 3C-6H polytypes junction
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Silicon carbide phase transition in as-grown 3C-6H polytypes junction
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| Creator |
Vlaskina, S.I.
Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. |
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| Description |
Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the same stacking faults are localized. Luminescence in the disordered α-zone as a result of phase transformation is represented by a set of intensely pronounced stacking fault spectra. These spectra reside on more or less intense background band, which are emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm appearance of stacking faults which are responsible for metastable intermediate microand nano-SiC structures. Solid-phase transformations β → α are related with the same intermediate metastable microstructure that take place in the transformation α → β. |
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| Date |
2017-05-26T09:12:16Z
2017-05-26T09:12:16Z 2013 |
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| Type |
Article
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| Identifier |
Silicon carbide phase transition
in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 64.70.K-, 77.84.Bw, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/117681 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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