Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
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| Creator |
Kavetskyy, T.S.
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| Description |
Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps components are observed in positron annihilation lifetime spectroscopy. |
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| Date |
2017-05-26T09:18:15Z
2017-05-26T09:18:15Z 2013 |
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| Type |
Article
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| Identifier |
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ.
1560-8034 PACS 61.43.Fs http://dspace.nbuv.gov.ua/handle/123456789/117682 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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