Influence of electron-electron drag on piezoresistance of n-Si
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of electron-electron drag on piezoresistance of n-Si
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| Creator |
Boiko, I.I.
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| Description |
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls.
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| Date |
2017-05-26T12:54:37Z
2017-05-26T12:54:37Z 2011 |
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| Type |
Article
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| Identifier |
Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS 61.72, 72.20 http://dspace.nbuv.gov.ua/handle/123456789/117714 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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