Electron mobility in the GaAs/InGaAs/GaAs quantum wells
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
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| Creator |
Vainberg, V.V.
Pylypchuk, A.S. Baidus, N.V. Zvonkov, B.N. |
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| Description |
The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the adjacent barrier at a small distance from the well – were used. In the case of shallow wells, in such structures the experimental results may be well described by known electron scattering mechanisms taking into account the shape of real envelope wave functions and band bending due to non-uniform distribution of the positive and negative space charges along the growth direction of heterostructure layers. In the case of delta-like doping in the well, a good agreement between experiment and calculations is achieved, if one takes into account a contribution to electron transport of the states of the impurity band formed by the deltaimpurity beneath the bottom of the lowest quantum subband. |
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| Date |
2017-05-26T09:40:44Z
2017-05-26T09:40:44Z 2013 |
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| Type |
Article
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| Identifier |
Electron mobility in the GaAs/InGaAs/GaAs quantum wells / V.V. Vainberg, A.S. Pylypchuk, N.V. Baidus and B.N. Zvonkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 152-161. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 72.20.Fr, 72.80.Ey, 73.20.At, 73.21.Fg, 73.63.Hs, 81.07.St http://dspace.nbuv.gov.ua/handle/123456789/117687 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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