Electrical properties of MIS structures with silicon nanoclusters
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electrical properties of MIS structures with silicon nanoclusters
|
|
| Creator |
Bunak, S.V.
Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. |
|
| Description |
The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics. |
|
| Date |
2017-05-26T13:09:03Z
2017-05-26T13:09:03Z 2011 |
|
| Type |
Article
|
|
| Identifier |
Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 72.20.Ee, 73.40.Qv http://dspace.nbuv.gov.ua/handle/123456789/117722 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|