The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
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| Creator |
Belyaev, A.E.
Boltovets, N.S. Kapitanchuk, L.M. Konakova, R.V. Kladko, V.P. Kudryk, Ya.Ya. Kuchuk, A.V. Lytvyn, O.S. Milenin, V.V. Korostinskaya, T.V. Ataubaeva, A.B. Nevolin, P.V. |
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| Description |
We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface. |
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| Date |
2017-05-26T12:07:14Z
2017-05-26T12:07:14Z 2010 |
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| Type |
Article
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| Identifier |
The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 85.30.De http://dspace.nbuv.gov.ua/handle/123456789/117698 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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