Запис Детальніше

Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

Vernadsky National Library of Ukraine

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Title Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
 
Creator Fodchuk, I.M.
Gutsuliak, I.I.
Zaplitniy, R.A.
Balovsyak, S.V.
Yaremiy, I.P.
Bonchyk, O.Yu.
Savitskiy, G.V.
Syvorotka, I.M.
Lytvyn, P.M.
 
Description The scattering field gradient maps of surface layer magnetic domains in
Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with
nitrogen ions N+
were obtained by the method of magnetic force microscopy. It was
found that improving the magnetic properties of thin films, which includes reducing the
observed magnetic losses after high-dose implantation, is accompanied by essential
ordering of magnetic domains on the surface of the implanted films. There is a direct
dependence of the magnetic properties on the dose of implanted atoms, accompanied by
a significant dispersion and amorphization of surface layer and formation of a clear
magnetic structure.
 
Date 2017-05-26T13:55:26Z
2017-05-26T13:55:26Z
2013
 
Type Article
 
Identifier Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.
1560-8034
PACS 75.50.Gg
http://dspace.nbuv.gov.ua/handle/123456789/117733
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України