Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
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Creator |
Fodchuk, I.M.
Gutsuliak, I.I. Zaplitniy, R.A. Balovsyak, S.V. Yaremiy, I.P. Bonchyk, O.Yu. Savitskiy, G.V. Syvorotka, I.M. Lytvyn, P.M. |
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Description |
The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force microscopy. It was found that improving the magnetic properties of thin films, which includes reducing the observed magnetic losses after high-dose implantation, is accompanied by essential ordering of magnetic domains on the surface of the implanted films. There is a direct dependence of the magnetic properties on the dose of implanted atoms, accompanied by a significant dispersion and amorphization of surface layer and formation of a clear magnetic structure. |
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Date |
2017-05-26T13:55:26Z
2017-05-26T13:55:26Z 2013 |
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Type |
Article
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Identifier |
Magnetic force microscopy of YLaFeO films implanted
by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.
1560-8034 PACS 75.50.Gg http://dspace.nbuv.gov.ua/handle/123456789/117733 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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