Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
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Creator |
Bunak, S.V.
Buyanin, A.A. Ilchenko, V.V. Marin, V.V. Melnik, V.P. Khacevich, I.M. Tretyak, O.V. Shkavro, A.G. |
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Description |
The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C - V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the effect of memorizing. |
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Date |
2017-05-26T12:09:53Z
2017-05-26T12:09:53Z 2010 |
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Type |
Article
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Identifier |
Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ.
1560-8034 PACS 73.61.Cw, Ng http://dspace.nbuv.gov.ua/handle/123456789/117699 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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