Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge
|
|
| Creator |
Gaidar, G.P.
|
|
| Description |
Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial resistivity of single crystals with concentrations NAs ≥ 5×10¹⁵ cm⁻³ remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with NAs ≈ 7.79×10¹³ cm⁻³ and less) the used doses of γ-irradiation cause appreciable reduction both in the carrier concentration nc and their mobility μ.
|
|
| Date |
2017-05-26T16:12:02Z
2017-05-26T16:12:02Z 2011 |
|
| Type |
Article
|
|
| Identifier |
Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 294-297. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS 61.80.Ed, 61.82.Fk, 72.20.-i http://dspace.nbuv.gov.ua/handle/123456789/117756 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|