Silicon carbide defects and luminescence centers in current heated 6H-SiC
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Silicon carbide defects and luminescence centers in current heated 6H-SiC
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| Creator |
Lee, S.W.
Vlaskina, S.I. Vlaskin, V.I. Zaharchenko, I.V. Gubanov, V.A. Mishinova, G.N. Svechnikov, G.S. Rodionov, V.E. Podlasov, S.A. |
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| Description |
At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly understood yet. We annealed 6H-SiC substrates by current in vacuum without boron injection at the temperature of 1350 and 1500 ºC. We received red and yellow luminescence in PL spectrum for the heated 6H-SiC. The luminescence was regarded as donor-acceptor pair recombination involving the deep aluminum acceptor related to the adjacent carbon vacancies and nitrogen donor or the formation of quantum well like regions of 3C-SiC in 6H-SiC matrix. |
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| Date |
2017-05-26T12:18:31Z
2017-05-26T12:18:31Z 2010 |
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| Type |
Article
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| Identifier |
Silicon carbide defects and luminescence centers
in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ.
1560-8034 PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf http://dspace.nbuv.gov.ua/handle/123456789/117702 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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