Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
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| Creator |
Belyaev, A.E.
Boltovets, N.S. Zhilyaev, Yu.V. Zhigunov, V.S. Konakova, R.V. Panteleev, V.N. Sachenko, A.V. Sheremet, V.N. |
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| Description |
We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to AlN (GaN). This seems to result from increase of the number of structural defects in the semiconductor near-contact region caused by relaxation of intrinsic stresses induced by microwave radiation. |
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| Date |
2017-05-26T14:02:41Z
2017-05-26T14:02:41Z 2013 |
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| Type |
Article
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| Identifier |
Effect of microwave radiation on I-V curves and contact resistivity
of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS 73.40.Ns; 73.40.Cg, 85.40.-e http://dspace.nbuv.gov.ua/handle/123456789/117734 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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