On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃
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| Creator |
Borovoy, N.
Gololobov, Yu. Isaienko, G. Salnik, A. |
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| Description |
The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under laser irradiation (λ = 532 nm). It was found that the parameter c increases almost linear with decreasing the temperature from 300 down to 100 K for samples in the dark. At the same time, for samples that were exposed during cooling to laser irradiation, the increase of the parameter с by the value ∆c ≈ (0.002…0.003) Å is observed at temperatures Tp = 145…147 K. This leap is typical for systems in which a phase transition of the first order occurs. Furthermore, there were investigated temperature dependences of the integral relative intensity I(T) of main structural maxima of Ag₃AsS₃ both in the dark mode and under laser irradiation. It was established the character of the dependence I(T) for these reflexes was changed significantly by laser irradiation. |
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| Date |
2017-05-26T14:08:56Z
2017-05-26T14:08:56Z 2013 |
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| Type |
Article
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| Identifier |
On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ / N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 293-296. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 61.50.Ks, 77.80.Bh http://dspace.nbuv.gov.ua/handle/123456789/117735 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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