Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
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| Creator |
Rudenko, T.
Nazarov, A. Kilchytska, V. Flandre, D. Popov, V. Ilnitsky, M. Lysenko, V. |
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| Description |
The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one Si film/dielectric interface on charges at the opposite interface and opposite gate bias. Traditionally, gate-to-substrate coupling in SOI MOS transistors is described by the classical Lim-Fossum model. However, in the case of SOI MOS transistors with ultra-thin silicon bodies, significant deviations from this model are observed. In this paper, the behavior of gate coupling in SOI MOS structures with ultra-thin silicon films and ultra-thin gate dielectrics is studied and analyzed using experimental data and one-dimensional numerical simulations in classical and quantum-mechanical modes. It is shown that in these advanced transistor structures, coupling characteristics (dependences of the front- and back-gate threshold voltages on the opposite gate bias) feature a larger slope and much wider (more than doubled) linear region than that predicted by the Lim-Fossum model. These differences originate from both electrostatic and quantization effects. A simple analytical model taking into account these effects and being in good agreement with numerical simulations and experimental results is proposed. |
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| Date |
2017-05-26T14:23:17Z
2017-05-26T14:23:17Z 2013 |
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| Type |
Article
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| Identifier |
Revision of interface coupling in ultra-thin body
silicon-on-insulator MOSFETs / T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 300-309. — Бібліогр.: 23 назв. — англ.
1560-8034 PACS 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/117737 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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