Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure
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| Creator |
Steblenko, L.P.
Koplak, O.V. Syvorotka, I.I. Kravchenko, V.S. |
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| Description |
Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed due to changes in Si/SiO₂ optical properties. The most sensitive to magnetic field (about 35 per cent) is the intensity of the 1.9 eV CL band attributed to non-bridge oxygen atoms. |
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| Date |
2017-05-26T16:01:06Z
2017-05-26T16:01:06Z 2011 |
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| Type |
Article
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| Identifier |
Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure / L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 334-338. — Бібліогр.: 20 назв. — англ.
1560-8034 PACS 07.57.-c, 61.43.Dq, 61.72.Dd, 68.35.Dv, 78.60.Hk, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/117754 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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