Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
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Creator |
Vlasenko, N.A.
Oleksenko, P.F. Mukhlyo, M.O. Lytvyn, P.M. Veligura, L.I. Denisova, Z.L. |
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Description |
The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accompanied by strong weakening the emission recorded from the waveguide edge whereas the emission from the structure face remains intensive. It is shown that the above changes stem from increasing optical losses caused by appearance of light scattering in the structure by inhomogeneities formed during lasing as a consequence the most probably of recrystallization processes in the Cr:ZnS film. Some ways are proposed to improve the lasing stability |
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Date |
2017-05-26T16:06:51Z
2017-05-26T16:06:51Z 2011 |
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Type |
Article
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Identifier |
Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 42.55.-f, 42.79.Gn, 68.55.Ln, 78.60.Fi http://dspace.nbuv.gov.ua/handle/123456789/117755 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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