Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
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| Creator |
Boiko, I.I.
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| Description |
Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the drift velocity of light holes and, as a result, the whole conductivity of crystal. The drag effect considered here appears also in the form of non-monotonous dependences of conductivity on temperature and carrier concentration. |
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| Date |
2017-05-26T16:19:34Z
2017-05-26T16:19:34Z 2011 |
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| Type |
Article
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| Identifier |
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 357-361. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 61.72, 72.20 http://dspace.nbuv.gov.ua/handle/123456789/117762 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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