Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals
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| Creator |
Taghiyev, T.B.
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| Description |
The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it was established that after doping with the rare-earth element erbium N = 10¹⁸ cm⁻³ and γ-radiation the photoconductivity value and the intensity of photoluminescence radiation increased in the investigated samples. A defect-formation model explaining the observed characteristics was proposed. |
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| Date |
2017-05-26T16:25:53Z
2017-05-26T16:25:53Z 2011 |
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| Type |
Article
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| Identifier |
Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals single crystals / T.B. Taghiyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 362-364. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 61.80.-x, 72.40.+w, 78.55 http://dspace.nbuv.gov.ua/handle/123456789/117763 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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