Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells
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| Creator |
Gudenko1, Yu.M.
Vainberg, V.V. Poroshin, V.M. Tulupenko, V.M. |
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| Description |
The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. The data of the drift length, drift mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under the electric field up to 1500 V/cm are presented. |
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| Date |
2017-05-26T16:31:56Z
2017-05-26T16:31:56Z 2011 |
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| Type |
Article
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| Identifier |
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells/ Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 375-379. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 73.21.Fg, 73.50.Gr, Pz http://dspace.nbuv.gov.ua/handle/123456789/117768 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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