Influence of small miscuts on self-ordered growth of Ge nanoislands
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of small miscuts on self-ordered growth of Ge nanoislands
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| Creator |
Gudymenko, O.Yo.
Kladko, V.P. Yefanov, O.M. Slobodian, M.V. Polischuk, Yu.S. Krasilnik, Z.F. Lobanov, D.V. Novikov, А.А. |
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| Description |
Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform deformation fields. This modulation is induced by small (∼0.3°) misorientation of Si substrate from [001] direction. Finally, we show that the miscut can be the source of perfectly ordered nanoisland arrays in two dimensions when the growth is performed on the strained SiGe (001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of buffer layer surface from [001] growth direction via increasing the Ge content. |
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| Date |
2017-05-26T17:45:36Z
2017-05-26T17:45:36Z 2011 |
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| Type |
Article
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| Identifier |
Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ.
1560-8034 PACS 68.37.Ef, 81.07.Ta, 81.16.Rf http://dspace.nbuv.gov.ua/handle/123456789/117796 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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