Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum
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| Creator |
Neimash, V.B.
Poroshin, V.M. Shepeliavyi, P.Ye. Yukhymchuk, V.O. Melnyk, V.V. Makara, M.A. Kuzmich, A.G. |
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| Description |
The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4- nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin – amorphous silicon. |
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| Date |
2017-05-26T19:00:17Z
2017-05-26T19:00:17Z 2013 |
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| Type |
Article
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| Identifier |
Tin doping effect on crystallization of amorphous silicon
obtained by vapor deposition in vacuum / V.B. Neimash, V.M. Poroshin, P.Ye. Shepeliavyi, V.O. Yukhymchuk, V.V. Melnyk, V.A. Makara, A.G. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 331-335. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 61.66.Dk, -f; 61.72.Cc, J-, Tt; 61.82.Fk; 71.55.Cn http://dspace.nbuv.gov.ua/handle/123456789/117819 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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