Tunneling current via dislocations in InAs and InSb infrared photodiodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Tunneling current via dislocations in InAs and InSb infrared photodiodes
|
|
| Creator |
Sukach, A.V.
Tetyorkin, V.V. Krolevec, N.M. |
|
| Description |
Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of n-type conductivity, respectively. The direct current was measured as a function of bias voltage and temperature. The excess tunneling current is observed in the investigated photodiodes at small forward bias voltages. Experimental proofs are obtained that dislocations are responsible for this current. A model for the tunneling current via dislocations is briefly discussed. |
|
| Date |
2017-05-26T17:40:17Z
2017-05-26T17:40:17Z 2011 |
|
| Type |
Article
|
|
| Identifier |
Tunneling current via dislocations in InAs and InSb infrared photodiodes / A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 416-420. — Бібліогр.: 27 назв. — англ.
1560-8034 PACS 61.72.uj, Hh, Lk;73.40.Gk, Kp; 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/117788 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|