Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content
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| Creator |
Kosyachenko, L.A.
Rarenko, I.M. Aoki, T. Sklyarchuk, V.M. Maslyanchuk, O.L. Yurtsenyuk, N.S. Zakharuk, Z.І. |
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| Description |
The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40) crystals with p-type conduction and resistivity 10⁴– 10⁸ Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences have been determined. The electrical conductivity of this material and its temperature variation are explained in terms of statistics for electrons and holes in semiconductor with taking into account the compensation process. The energy of ionization and degree of compensation levels responsible for the electrical conductivity of the samples have been found. |
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| Date |
2017-05-26T17:40:54Z
2017-05-26T17:40:54Z 2011 |
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| Type |
Article
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| Identifier |
Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content / .A. Kosyachenko, I.M. Rarenko, T. Aoki, V.M. Sklyarchuk, O.L. Maslyanchuk, N.S. Yurtsenyuk, Z.І. Zakharuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 421-426. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 72.20.-i, 72.80.Ey, 78.20.Ci http://dspace.nbuv.gov.ua/handle/123456789/117789 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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